STP23NM50N vs STP23NM50N,23NM50N vs STP23NM60N

 
PartNumberSTP23NM50NSTP23NM50N,23NM50NSTP23NM60N
DescriptionMOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A SwitchMOSFET N-CH 600V 19A TO-220
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleThrough Hole--
Package / CaseTO-220-3-TO-220-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance162 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingTube-Tube
SeriesSTP23NM50N-MDmesh II
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.011640 oz--
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--600V
Current Continuous Drain (Id) @ 25°C--19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--4V @ 250A
Gate Charge (Qg) (Max) @ Vgs--60nC @ 10V
Vgs (Max)--±25V
Input Capacitance (Ciss) (Max) @ Vds--2050pF @ 50V
FET Feature---
Power Dissipation (Max)--150W (Tc)
Rds On (Max) @ Id, Vgs--180 mOhm @ 9.5A, 10V
Operating Temperature--150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-220AB
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