STP13NM60N vs STP13NM50N vs STP13NM60N 13NM60N

 
PartNumberSTP13NM60NSTP13NM50NSTP13NM60N 13NM60N
DescriptionMOSFET N-Ch 600 Volt 11 Amp Power MDmeshMOSFET N Ch 600V 8A Pwr MESH IGBT
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V500 V-
Id Continuous Drain Current11 A12 A-
Rds On Drain Source Resistance360 mOhms320 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation90 W100 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameMDmesh--
PackagingTube--
SeriesSTP13NM60NSTB13N-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns15 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns40 ns-
Typical Turn On Delay Time3 ns30 ns-
Unit Weight0.011640 oz0.011640 oz-
Height-9.15 mm-
Length-10.4 mm-
Width-4.6 mm-
Top