STN2NE10 vs STN2NE10 N2NE10 SOT223 vs STN2NE10-TR

 
PartNumberSTN2NE10STN2NE10 N2NE10 SOT223STN2NE10-TR
DescriptionMOSFET N-Ch 100 Volt 2 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.8 mm--
Length6.5 mm--
SeriesSTN2NE10--
Transistor Type1 N-Channel--
TypeMOSFET--
Width3.5 mm--
BrandSTMicroelectronics--
Forward Transconductance Min1.8 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.008818 oz--
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