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STH270N4F3-6 vs STH270N4F3-2 vs STH270N4F3

 
PartNumberSTH270N4F3-6STH270N4F3-2STH270N4F3
DescriptionMOSFET N-Ch 40V 1.40 mOhm STripFET III 180AMOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-7H2PAK-2-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance1.4 mOhms1.4 mOhms-
Vgs th Gate Source Threshold Voltage4 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge110 nC110 nC-
Pd Power Dissipation300 W300 W-
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101-
TradenameSTripFETSTripFETSTripFET
PackagingReelReelReel
SeriesSTH270N4F3-6STH270N4F3-2N-channel STripFET
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time45 ns45 ns45 ns
Product TypeMOSFETMOSFET-
Rise Time180 ns180 ns180 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.056438 oz0.139332 oz0.139332 oz
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Channel Mode-EnhancementEnhancement
Typical Turn Off Delay Time-110 ns110 ns
Typical Turn On Delay Time-25 ns25 ns
Package Case--TO-252-3
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--180 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--1.4 mOhms
Qg Gate Charge--110 nC
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