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STH110N10F7-2 vs STH110N10F7-6 vs STH110N10F7

 
PartNumberSTH110N10F7-2STH110N10F7-6STH110N10F7
DescriptionMOSFET N-Ch 100V 6mOhm 110A STripFET VIIMOSFET N-CH 100V 49mOhm 110A STripFET VII
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseH2PAK-2TO-263-7-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current110 A110 A-
Rds On Drain Source Resistance6.5 mOhms6.5 mOhms-
Vgs th Gate Source Threshold Voltage4 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge60 nC72 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation150 W150 W-
ConfigurationSingleSingleSingle
TradenameSTripFET--
PackagingReelReelReel
ProductPower MOSFET--
SeriesSTH110N10F7-2STH110N10F7N-channel STripFET
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.056438 oz0.139332 oz
Channel Mode-Enhancement-
Fall Time-21 ns-
Rise Time-36 ns-
Typical Turn Off Delay Time-52 ns-
Typical Turn On Delay Time-25 ns-
Package Case--TO-252-3
Pd Power Dissipation--150 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--110 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--2 V to 4 V
Rds On Drain Source Resistance--6.5 mOhms
Qg Gate Charge--60 nC
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