STGWT30V60DF vs STGWT30V60F vs STGWT30V60DF GWT30V60DF

 
PartNumberSTGWT30V60DFSTGWT30V60FSTGWT30V60DF GWT30V60DF
DescriptionIGBT Transistors 600V 30A High Speed Trench Gate IGBTIGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-3PTO-3P-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.35 V2.3 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation258 W260 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGWT30V60DFSTGWT30V60F-
PackagingTubeTube-
BrandSTMicroelectronicsSTMicroelectronics-
Gate Emitter Leakage Current250 nA250 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity300300-
SubcategoryIGBTsIGBTs-
Unit Weight0.238311 oz0.245577 oz-
Continuous Collector Current Ic Max-30 A-
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