 |  | | |
| PartNumber | STGW39NC60VD | STGW39NC60VD GW39NC60VD | STGW39NC60V |
| Description | IGBT Transistors N-CHANNEL MFT | ||
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.8 V/1.7 V | - | 1.8 V/1.7 V |
| Maximum Gate Emitter Voltage | 20 V | - | +/- 20 V |
| Pd Power Dissipation | 250 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | STGW39NC60VD | - | PowerMESH |
| Packaging | Tube | - | Tube |
| Continuous Collector Current Ic Max | 80 A | - | 80 A |
| Height | 20.15 mm | - | - |
| Length | 15.75 mm | - | - |
| Width | 5.15 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Continuous Collector Current | 70 A | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | - | +/- 100 nA |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 600 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247-3 |
| Power Max | - | - | 250W |
| Reverse Recovery Time trr | - | - | 45ns |
| Current Collector Ic Max | - | - | 80A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 220A |
| Vce on Max Vge Ic | - | - | 2.4V @ 15V, 30A |
| Switching Energy | - | - | 333μJ (on), 537μJ (off) |
| Gate Charge | - | - | 126nC |
| Td on off 25°C | - | - | 33ns/178ns |
| Test Condition | - | - | 390V, 30A, 10 Ohm, 15V |
| Pd Power Dissipation | - | - | 250 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |