STGW30NC120HD vs STGW30NC120HD GW30NC120HD vs STGW30NC120HD GW30NC120H

 
PartNumberSTGW30NC120HDSTGW30NC120HD GW30NC120HDSTGW30NC120HD GW30NC120H
DescriptionIGBT Transistors N-CHANNEL IGBT
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.75 V--
Maximum Gate Emitter Voltage25 V--
Pd Power Dissipation220 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGW30NC120HD--
PackagingTube--
Continuous Collector Current Ic Max60 A--
Height20.15 mm--
Length15.75 mm--
Width5.15 mm--
BrandSTMicroelectronics--
Continuous Collector Current30 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
TradenamePowerMESH--
Unit Weight1.340411 oz--
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