STGP7NC60HD vs STGP7NC60H vs STGP7NC60HD,GP7NC60HD

 
PartNumberSTGP7NC60HDSTGP7NC60HSTGP7NC60HD,GP7NC60HD
DescriptionIGBT Transistors IGBTIGBT Transistors V-FAST POWERMESH
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3 FP--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.5 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation80 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGP7NC60HDPowerMESH-
PackagingTubeTube-
Continuous Collector Current Ic Max25 A--
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current14 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.081130 oz--
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Power Max-80W-
Reverse Recovery Time trr---
Current Collector Ic Max-25A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-50A-
Vce on Max Vge Ic-2.5V @ 15V, 7A-
Switching Energy-95μJ (on), 115μJ (off)-
Gate Charge-35nC-
Td on off 25°C-18.5ns/72ns-
Test Condition-390V, 7A, 10 Ohm, 15V-
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