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| PartNumber | STGF10M65DF2 | STGF10H60DF | STGF100N30 |
| Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors Trench gate H series 600V 10A HiSpd | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-220FP-3 | TO-220-3 FP | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.8 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 20 A | 20 A | - |
| Pd Power Dissipation | 30 W | 30 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | STGF10M65DF2 | STGF10H60DF | - |
| Continuous Collector Current Ic Max | 20 A | 10 A | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Gate Emitter Leakage Current | +/- 250 uA | 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.068784 oz | 0.081130 oz | - |