STGE200NB60S vs STGE vs STGE2547A

 
PartNumberSTGE200NB60SSTGESTGE2547A
DescriptionIGBT Modules N-Ch 600 Volt 150Amp
ManufacturerSTMicroelectronics--
Product CategoryIGBT Modules--
RoHSY--
ConfigurationSingle Dual Emitter--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.2 V--
Continuous Collector Current at 25 C200 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation600 W--
Package / CaseISOTOP-4--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Height9.1 mm--
Length38.2 mm--
SeriesSTGE200NB60S--
Width25.5 mm--
BrandSTMicroelectronics--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity100--
SubcategoryIGBTs--
TradenamePowerMESH--
Unit Weight1 oz--
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