STD4N52K3 vs STD4N52K3-CUT TAPE vs STD4N50

 
PartNumberSTD4N52K3STD4N52K3-CUT TAPESTD4N50
DescriptionMOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage525 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance1.95 Ohms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage3 V--
Qg Gate Charge14 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingReel--
SeriesSTD4N52K3--
Transistor Type1 N-Channel--
TypeSuperMesh3 Power MOSFET--
BrandSTMicroelectronics--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
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