STD3N62K3 vs STD3N60 vs STD3N62K3-1

 
PartNumberSTD3N62K3STD3N60STD3N62K3-1
DescriptionMOSFET N-channel 620V, 2.7A SuperMESH Mosfet
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage620 V--
Id Continuous Drain Current2.7 A--
Rds On Drain Source Resistance2.5 Ohms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingReel--
Height2.4 mm--
Length6.6 mm--
SeriesSTD3N62K3--
Transistor Type1 N-Channel--
Width6.2 mm--
BrandSTMicroelectronics--
Fall Time15.6 ns--
Product TypeMOSFET--
Rise Time6.8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.139332 oz--
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