STD1NK60-1 vs STD1NK60-1,D1NK60-1,D1NK vs STD1NK60-1-H

 
PartNumberSTD1NK60-1STD1NK60-1,D1NK60-1,D1NKSTD1NK60-1-H
DescriptionMOSFET N-Ch 600 Volt 1.0 A
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance8 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height6.2 mm--
Length6.6 mm--
SeriesSTQ1HNK60R--
Transistor Type1 N-Channel--
TypeMOSFET--
Width2.4 mm--
BrandSTMicroelectronics--
Forward Transconductance Min1 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time6.5 ns--
Unit Weight0.139332 oz--
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