STD11NM60ND vs STD11NM60N vs STD11NM60N-1

 
PartNumberSTD11NM60NDSTD11NM60NSTD11NM60N-1
DescriptionMOSFET N-channel 600V, 10A FDMesh IIMOSFET N-CH 600V 10A DPAKMOSFET N-CH 600V 10A I-PAK
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance450 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameFDmesh--
PackagingReel--
Height2.4 mm--
Length6.6 mm--
SeriesSTD11NM60ND--
Transistor Type1 N-Channel--
Width6.2 mm--
BrandSTMicroelectronics--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time16 ns--
Unit Weight0.139332 oz--
Top