STB8NM60D vs STB8NM60N vs STB8NM60

 
PartNumberSTB8NM60DSTB8NM60NSTB8NM60
DescriptionMOSFET N Ch 600V 0.9Ohm 8AMOSFET N-ch 600 Volts 7 Amp
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current8 A7 A-
Rds On Drain Source Resistance1 Ohms650 mOhms-
Vgs Gate Source Voltage30 V25 V-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation100 W70 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameMDmesh--
PackagingReelReel-
Height4.6 mm4.6 mm-
Length10.4 mm10.4 mm-
SeriesSTB8NM60DSTx8NM60N-
Transistor Type1 N-Channel1 N-Channel-
Width9.35 mm9.35 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time8 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns12 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns40 ns-
Typical Turn On Delay Time13 ns10 ns-
Unit Weight0.139332 oz0.139332 oz-
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