STB6N60M2 vs STB6N62K3 vs STB6N60

 
PartNumberSTB6N60M2STB6N62K3STB6N60
DescriptionMOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2MOSFET N-Channel Power Mosfet D2PAK
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V620 V-
Id Continuous Drain Current4.5 A5.5 A-
Rds On Drain Source Resistance1.06 Ohms950 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V30 V-
Qg Gate Charge8 nC34 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation60 W90 W-
ConfigurationSingleSingleSingle
TradenameMDmesh--
PackagingReelReelReel
SeriesSTB6N60M2STB6N62K3MDmesh M2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time22.5 ns20 ns22.5 ns
Product TypeMOSFETMOSFET-
Rise Time7.4 ns12 ns7.4 nS
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns49 ns24 ns
Typical Turn On Delay Time9.5 ns22 ns9.5 ns
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--60 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--4.5 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--1.06 Ohms
Qg Gate Charge--8 nC
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