STB42N65M5 vs STB42N60M2-EP vs STB42N65DM5

 
PartNumberSTB42N65M5STB42N60M2-EPSTB42N65DM5
DescriptionMOSFET N-ch 650 Volt 33AmpMOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V600 V-
Id Continuous Drain Current33 A34 A-
Rds On Drain Source Resistance79 mOhms87 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation190 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameMDmeshMDmesh-
PackagingReelReel-
Height4.6 mm--
Length10.4 mm--
SeriesSTB42N65M5STB42N60M2-EP-
Transistor Type1 N-Channel--
Width9.35 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time13 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns9.5 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time65 ns96.5 ns-
Typical Turn On Delay Time61 ns16.5 ns-
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-2 V-
Qg Gate Charge-55 nC-
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