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| PartNumber | STB34N65M5 | STB34N50DM2AG | STB34N65M5-CUT TAPE |
| Description | MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5 | MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 500 V | - |
| Id Continuous Drain Current | 18.3 A | 26 A | - |
| Rds On Drain Source Resistance | 110 mOhms | 120 mOhms | - |
| Pd Power Dissipation | 190 W | 190 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Reel | Reel | - |
| Series | STB34N65M5 | STB34N50DM2AG | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 44 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Qualification | - | AEC-Q101 | - |
| Height | - | 4.6 mm | - |
| Length | - | 10.4 mm | - |
| Product | - | Power MOSFET | - |
| Type | - | High Voltage | - |
| Width | - | 9.35 mm | - |
| Fall Time | - | 8.1 ns | - |
| Rise Time | - | 11.5 ns | - |
| Typical Turn Off Delay Time | - | 65.5 ns | - |
| Typical Turn On Delay Time | - | 19.5 ns | - |