PartNumber | STB23NM50N | STB23N80K5 | STB23N80K5ST |
Description | MOSFET MDmesh II N-Ch 500V 17A ID <0.19 RDS(on) | MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | 800 V | - |
Id Continuous Drain Current | 17 A | 16 A | - |
Rds On Drain Source Resistance | 162 mOhms | 280 mOhms | - |
Vgs Gate Source Voltage | 25 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 125 W | 190 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Reel | Reel | - |
Series | STB23NM50N | STB23N80K5 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Qg Gate Charge | - | 33 nC | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 9 ns | - |
Rise Time | - | 9 ns | - |
Typical Turn Off Delay Time | - | 48 ns | - |
Typical Turn On Delay Time | - | 14 ns | - |