STB23NM50N vs STB23N80K5 vs STB23N80K5ST

 
PartNumberSTB23NM50NSTB23N80K5STB23N80K5ST
DescriptionMOSFET MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V800 V-
Id Continuous Drain Current17 A16 A-
Rds On Drain Source Resistance162 mOhms280 mOhms-
Vgs Gate Source Voltage25 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W190 W-
ConfigurationSingleSingle-
TradenameMDmeshMDmesh-
PackagingReelReel-
SeriesSTB23NM50NSTB23N80K5-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-4 V-
Qg Gate Charge-33 nC-
Channel Mode-Enhancement-
Fall Time-9 ns-
Rise Time-9 ns-
Typical Turn Off Delay Time-48 ns-
Typical Turn On Delay Time-14 ns-
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