STB21N65M5 vs STB21N65M5 21N65M5 vs STB21N65M5 , MMBTA517

 
PartNumberSTB21N65M5STB21N65M5 21N65M5STB21N65M5 , MMBTA517
DescriptionMOSFET POWER MOSFET N-CH 650V
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance190 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
TradenameMDmesh--
PackagingReel--
SeriesSTB21N65M5--
TypePower MOSFET--
BrandSTMicroelectronics--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Top