STB20NM50-1 vs STB20NM50 vs STB20NM50FD

 
PartNumberSTB20NM50-1STB20NM50STB20NM50FD
DescriptionMOSFET N-Ch 500 Volt 20 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance250 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation192 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height8.95 mm--
Length10 mm--
SeriesSTB20NM50--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.4 mm--
BrandSTMicroelectronics--
Forward Transconductance Min10 S--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.050717 oz--
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