STB12NM50 vs STB12NM50-1 vs STB12NM50FD

 
PartNumberSTB12NM50STB12NM50-1STB12NM50FD
DescriptionMOSFET Transistor, N-Channel, TO-263ABMOSFET Transistor, N-Channel, TO-263AB
ManufacturerST-ST
Product CategoryFETs - Single-FETs - Single
Series--FDmesh
Packaging--Cut Tape (CT)
Part Status--Obsolete
FET Type--N-Channel
Technology--MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)--500V
Current Continuous Drain (Id) @ 25°C--12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--5V @ 250A
Gate Charge (Qg) (Max) @ Vgs--12nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--1000pF @ 25V
FET Feature---
Power Dissipation (Max)--160W (Tc)
Rds On (Max) @ Id, Vgs--400 mOhm @ 6A, 10V
Operating Temperature---65°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Package / Case--TO-263-3, DPak (2 Leads + Tab), TO-263AB
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