STB100NF03L-03-1 vs STB100NF03L-03 vs STB100NF03L-03 B100NF03L

 
PartNumberSTB100NF03L-03-1STB100NF03L-03STB100NF03L-03 B100NF03L
DescriptionMOSFET N-Ch 30 Volt 100 Amp
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3.2 mOhms--
Vgs Gate Source Voltage16 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingTubeTube-
Height8.95 mm--
Length10 mm--
SeriesSTB100NF03L-03STB100NF03L-03-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width4.4 mm--
BrandSTMicroelectronics--
Fall Time95 ns95 ns-
Product TypeMOSFET--
Rise Time315 ns315 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time115 ns115 ns-
Typical Turn On Delay Time35 ns35 ns-
Unit Weight0.050717 oz0.050717 oz-
Package Case-I2PAK-3-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-3.2 mOhms-
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