START499D vs START499 vs START499E

 
PartNumberSTART499DSTART499START499E
DescriptionRF Bipolar Transistors NPN RF TRANSISTOR 29dBm 14dBgain 900mz
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
SeriesSTART499-START499ETR
Transistor TypeBipolarNPNNPN
TechnologySi--
Transistor PolarityNPN-NPN
Collector Emitter Voltage VCEO Max4.5 V--
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current1 A-600 mA
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
ConfigurationSingle-Single
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-89--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
DC Current Gain hFE Max150--
Height1.6 mm--
Length4.6 mm--
TypeRF Bipolar Small Signal--
Width2.6 mm--
BrandSTMicroelectronics--
Moisture SensitiveYes--
Pd Power Dissipation1.7 W--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Unit Weight0.004603 oz--
Package Case-TO-243AASC-82A, SOT-343
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-89SOT-343
Power Max-1.7W600mW
Current Collector Ic Max-1A600mA
Voltage Collector Emitter Breakdown Max-4.5V4.5V
DC Current Gain hFE Min Ic Vce-150 @ 160mA, 3V160 @ 160mA, 4V
Frequency Transition--1.9GHz
Noise Figure dB Typ f--3.3dB @ 1.8GHz
Gain-13dB ~ 14dB15dB
Pd Power Dissipation--600 mW
Collector Emitter Voltage VCEO Max--4.5 V
Collector Base Voltage VCBO--15 V
Emitter Base Voltage VEBO--1.5 V
Maximum DC Collector Current--600 mA
Gain Bandwidth Product fT--42 GHz
DC Collector Base Gain hfe Min--160
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