SQJQ404E-T1_GE3 vs SQJQ402E-T1_GE3 vs SQJQ402E-T1_GE3-CUT TAPE

 
PartNumberSQJQ404E-T1_GE3SQJQ402E-T1_GE3SQJQ402E-T1_GE3-CUT TAPE
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK 8 x 8LMOSFET N-Channel 40V AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-8x8L-4PowerPAK-8x8L-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current200 A200 A-
Rds On Drain Source Resistance1.72 mOhms1.3 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge175 nC260 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min160 S140 S-
Fall Time8 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time23 ns15 ns-
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time58 ns69 ns-
Typical Turn On Delay Time22 ns19 ns-
Qualification-AEC-Q101-
Tradename-TrenchFET-
Series-SQ-
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