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| PartNumber | SQJ858AEP-T1_GE3 | SQJ858AEP | SQJ858AEP-T1-G |
| Description | MOSFET 40V 58A 48W AEC-Q101 Qualified | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 58 A | - | - |
| Rds On Drain Source Resistance | 5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 55 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SQ | TrenchFETR | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 99 S | - | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | 26 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | PowerPAKR SO-8 | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SO-8 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 48W | - |
| Drain to Source Voltage Vdss | - | 40V | - |
| Input Capacitance Ciss Vds | - | 2450pF @ 20V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 58A (Tc) | - |
| Rds On Max Id Vgs | - | 6.3 mOhm @ 14A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 55nC @ 10V | - |
| Pd Power Dissipation | - | 48 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 58 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 6.3 mOhms | - |
| Qg Gate Charge | - | 36 nC | - |