 |  |  | |
| PartNumber | SQJ431EP-T1_GE3 | SQJ431AEP-T1_GE3 | SQJ431EP-T2_GE3 |
| Description | MOSFET -200v -12A 83W AEC-Q101 Qualified | MOSFET -200V Vds 20V Vgs PowerPAK SO-8L | MOSFET RECOMMENDED ALT 78-SQJ431AEP-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 12 A | 9.4 A | 12 A |
| Rds On Drain Source Resistance | 213 mOhms | 305 mOhms | 213 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2. 5 V | - 3.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 71 nC | 55 nC | 106 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 83 W | 68 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Tradename | TrenchFET | PowerPAK | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | - | SQ |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 P-Channel |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay |
| Forward Transconductance Min | 16 S | 15 S | 16 S |
| Fall Time | 10 ns | 5 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 5 ns | 11 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 44 ns | 35 ns | 44 ns |
| Typical Turn On Delay Time | 15 ns | 16 ns | 15 ns |
| Unit Weight | 0.017870 oz | 0.008466 oz | - |