SQD40N06-14L_GE3 vs SQD40N06-14L_T4GE3 vs SQD40N06-14L

 
PartNumberSQD40N06-14L_GE3SQD40N06-14L_T4GE3SQD40N06-14L
DescriptionMOSFET 55V 40A 75W AEC-Q101 QualifiedMOSFET 60V Vds 20V Vgs TO-252
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance11 mOhms14 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge51 nC51 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation75 W75 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReel--
SeriesSQSQ-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min52 S52 S-
Fall Time9 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns13 ns-
Factory Pack Quantity20001-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 ns22 ns-
Typical Turn On Delay Time8 ns8 ns-
Unit Weight0.000282 oz--
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