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| PartNumber | SQD40030E_GE3 | SQD40020EL_GE3 | SQD40020E_GE3 |
| Description | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET | MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 2.5 V |
| Qg Gate Charge | - | 108 nC | 84 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 107 W | 107 W |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Tube | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SQ | SQ | SQ |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.011993 oz | - | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Id Continuous Drain Current | - | 100 A | 100 A |
| Rds On Drain Source Resistance | - | 4.2 mOhms | 4.7 mOhms |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 115 S | 84 S |
| Fall Time | - | 20 ns | 18 ns |
| Rise Time | - | 10 ns | 17 ns |
| Typical Turn Off Delay Time | - | 50 ns | 34 ns |
| Typical Turn On Delay Time | - | 15 ns | 17 ns |