PartNumber | SQD23N06-31L_GE3 | SQD23N06-31L_T4GE3 | SQD23N06-31L |
Description | MOSFET 60V 23A 100W AEC-Q101 Qualified | MOSFET 60V Vds 20V Vgs TO-252 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 23 A | 23 A | - |
Rds On Drain Source Resistance | 24 mOhms | 31 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 24 nC | 24 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 37 W | 37 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | - | - |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Series | SQ | SQ | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 25 S | 25 S | - |
Fall Time | 3 ns | 3 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 8 ns | - |
Factory Pack Quantity | 2000 | 1 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 14 ns | 14 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Unit Weight | 0.050717 oz | - | - |