SQ3456BEV-T1_GE3 vs SQ3456BEV vs SQ3456BEV-T1-E3

 
PartNumberSQ3456BEV-T1_GE3SQ3456BEVSQ3456BEV-T1-E3
DescriptionMOSFET 30V 7.8A 4W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7.8 A--
Rds On Drain Source Resistance28 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation4 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.1 mm--
Length3.05 mm--
SeriesSQ--
Transistor Type1 N-Channel--
Width1.65 mm--
BrandVishay / Siliconix--
Forward Transconductance Min21 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time6 ns--
Unit Weight0.000705 oz--
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