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| PartNumber | SQ3426AEEV-T1_GE3 | SQ3425EV-T1_GE3 | SQ3426EEV |
| Description | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 20 V | - |
| Id Continuous Drain Current | 7 A | 7.4 A | - |
| Rds On Drain Source Resistance | 32 mOhms | 49 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.4 V | - |
| Vgs Gate Source Voltage | 20 V | 12 V | - |
| Qg Gate Charge | 14 nC | 10.3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 5 W | 5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 21 S | 9 S | - |
| Fall Time | 4 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 26 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 41 ns | - |
| Typical Turn On Delay Time | 7 ns | 11 ns | - |