SQ2398ES-T1_GE3 vs SQ2391ES vs SQ2398ES

 
PartNumberSQ2398ES-T1_GE3SQ2391ESSQ2398ES
DescriptionMOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.6 A--
Rds On Drain Source Resistance300 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge2.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min3 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time7 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.000282 oz--
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