SIZF906ADT-T1-GE3 vs SIZF300DT-T1-GE3 vs SIZF906DT

 
PartNumberSIZF906ADT-T1-GE3SIZF300DT-T1-GE3SIZF906DT
DescriptionMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5FMOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAIR-6x5F-8PowerPAIR3x3-4-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current60 A75 A, 141 A-
Rds On Drain Source Resistance3.8 mOhms, 1.17 mOhms4.5 mOhms, 1.84 mOhms-
Vgs th Gate Source Threshold Voltage1.1 V1 V, 1.1 V-
Vgs Gate Source Voltage10 V- 16 V, 20 V, - 12 V, 16 V-
Qg Gate Charge24.5 nC, 100 nC22 nC, 62 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation38 W, 83 W74 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, SkyFET, PowerPAIRTrenchFET-
PackagingReelReel-
SeriesSIZSIZ-
Transistor Type2 N-Channel2 N-Channel-
BrandVishay SemiconductorsVishay / Siliconix-
Forward Transconductance Min130 S, 130 S60 S, 90 S-
Fall Time40 ns, 30 ns7 ns, 12 ns-
Product TypeMOSFETMOSFET-
Rise Time80 ns, 60 ns40 ns, 53 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns, 65 ns23 ns, 30 ns-
Typical Turn On Delay Time20 ns, 45 ns17 ns, 25 ns-
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