SIZ340DT-T1-GE3 vs SIZ340DT vs SIZ342DT

 
PartNumberSIZ340DT-T1-GE3SIZ340DTSIZ342DT
DescriptionMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
ManufacturerVishay-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAIR-3x3-8--
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A, 40 A--
Rds On Drain Source Resistance9.5 mOhms, 5.1 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage- 16 V, 20 V--
Qg Gate Charge19 nC, 35 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation16.7 W, 31 W--
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelDigi-ReelR Alternate Packaging-
SeriesSIZPowerPAIRR, TrenchFETR-
Transistor Type2 N-Channel2 N-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min37 S, 60 S--
Fall Time7 ns, 7 ns7 ns-
Product TypeMOSFET--
Rise Time55 ns, 82 ns55 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns, 20 ns16 ns-
Typical Turn On Delay Time13 ns, 22 ns13 ns-
Package Case-8-PowerWDFN-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-Power33 (3x3)-
FET Type-2 N-Channel (Half Bridge)-
Power Max-16.7W, 31W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-760pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-30A, 40A-
Rds On Max Id Vgs-9.5 mOhm @ 15.6A, 10V-
Vgs th Max Id-2.4V @ 250μA-
Gate Charge Qg Vgs-19nC @ 10V-
Pd Power Dissipation-16.7 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-30 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2.4 V-
Rds On Drain Source Resistance-9.5 mOhms-
Qg Gate Charge-12.3 nC-
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