 | |  | |
| PartNumber | SISS10DN-T1-GE3 | SISS10ADN-T1-GE3 | SISS10DN |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S | MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8S | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 31.7 A | - |
| Rds On Drain Source Resistance | - | 2.65 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V | - |
| Vgs Gate Source Voltage | - | 20 V, - 16 V | - |
| Qg Gate Charge | - | 61 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 56.8 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 80 S | - |
| Fall Time | - | 5 ns | - |
| Rise Time | - | 5 ns | - |
| Typical Turn Off Delay Time | - | 30 ns | - |
| Typical Turn On Delay Time | - | 13 ns | - |