SIR680DP-T1-RE3 vs SIR688DP-T1-GE3 vs SIR688DP

 
PartNumberSIR680DP-T1-RE3SIR688DP-T1-GE3SIR688DP
DescriptionMOSFET 80V Vds 20V Vgs PowerPAK SO-8MOSFET 60V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V60 V-
Id Continuous Drain Current100 A60 A-
Rds On Drain Source Resistance2.4 mOhms2.9 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge105 nC66 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min75 S70 S-
Fall Time12 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns31 ns-
Typical Turn On Delay Time19 ns15 ns-
Unit Weight0.017870 oz0.017870 oz-
Height-1.04 mm-
Length-6.15 mm-
Width-5.15 mm-
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