PartNumber | SIHP28N65EF-GE3 | SIHP28N65E-GE3 | SIHP28N60EF-GE3 |
Description | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Packaging | Tube | Tube | Tube |
Series | EF | E | EF |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 650 V | - |
Id Continuous Drain Current | - | 29 A | - |
Rds On Drain Source Resistance | - | 97 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 93 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 250 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 45 ns | - |
Rise Time | - | 42 ns | - |
Typical Turn Off Delay Time | - | 88 ns | - |
Typical Turn On Delay Time | - | 28 ns | - |
Unit Weight | - | 0.211644 oz | 0.211644 oz |
Height | - | - | 15.49 mm |
Length | - | - | 10.41 mm |
Width | - | - | 4.7 mm |