PartNumber | SIA911ADJ-T1-GE3 | SIA910EDJ-T1-GE3 | SIA910EDJ-T1-GE3-CUT TAPE |
Description | MOSFET 20V 4.5A 6.5W | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | - |
Series | SIA | SIA | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SIA911ADJ-GE3 | SIA910EDJ-GE3 | - |
Unit Weight | 0.000988 oz | 0.000988 oz | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | PowerPAK-SC70-6 | - |
Number of Channels | - | 2 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 12 V | - |
Id Continuous Drain Current | - | 4.5 A | - |
Rds On Drain Source Resistance | - | 28 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
Vgs Gate Source Voltage | - | 8 V | - |
Qg Gate Charge | - | 16 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 7.8 W | - |
Configuration | - | Dual | - |
Channel Mode | - | Enhancement | - |
Height | - | 0.75 mm | - |
Length | - | 2.05 mm | - |
Transistor Type | - | 2 N-Channel | - |
Width | - | 2.05 mm | - |
Forward Transconductance Min | - | 23 S | - |
Fall Time | - | 12 ns | - |
Rise Time | - | 12 ns | - |
Typical Turn Off Delay Time | - | 25 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |