 | |  | |
| PartNumber | SIA430DJ-T1-GE3-CUT TAPE | SIA430DJ | SIA430DJ-T1-GE3 |
| Description | MOSFET N-CH 20V 12A SC70-6 | ||
| Manufacturer | - | - | Vishay Siliconix |
| Product Category | - | - | FETs - Single |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SIA430DJ-GE3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | PowerPAKR SC-70-6 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | PowerPAKR SC-70-6 Single |
| Configuration | - | - | Single Quad Drain Dual Source |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 19.2W |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 800pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 12A (Tc) |
| Rds On Max Id Vgs | - | - | 13.5 mOhm @ 7A, 10V |
| Vgs th Max Id | - | - | 3V @ 250μA |
| Gate Charge Qg Vgs | - | - | 18nC @ 10V |
| Pd Power Dissipation | - | - | 3.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns 8 ns |
| Rise Time | - | - | 10 ns 8 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 13.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 15 ns 17 ns |
| Typical Turn On Delay Time | - | - | 16 ns 10 ns |
| Channel Mode | - | - | Enhancement |