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| PartNumber | SI7684DP-T1-E3 | SI7684DP-T1-GE3 | SI7684DP |
| Description | MOSFET 30V 20A 27.5W | MOSFET 30V 20A 27.5W 9.0mohm @ 10V | |
| Manufacturer | Vishay | Vishay | VISHAY |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Series | SI7 | SI7 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI7684DP-E3 | SI7684DP-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Part Aliases | - | - | SI7684DP-E3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SO-8 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 9 ns |
| Rise Time | - | - | 60 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 17.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 9 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 28 ns |
| Typical Turn On Delay Time | - | - | 50 ns |
| Channel Mode | - | - | Enhancement |