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| PartNumber | SI4128DY-T1-E3 | SI4128DY-T1 | SI4128DY-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs SO-8 | MOSFET N-CH 30V 10.9A 8-SOIC | |
| Manufacturer | Vishay | VISHAY | VISHAY |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4128DY-E3 | - | - |
| Unit Weight | 0.006596 oz | - | 0.006596 oz |
| Part Aliases | - | - | SI4128DY-GE3 |
| Package Case | - | - | SOIC-Narrow-8 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2.4 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 10.9 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 24 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 15 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Forward Transconductance Min | - | - | 17 S |
| Channel Mode | - | - | Enhancement |