PartNumber | SI2307CDS-T1-GE3 | SI2307CDS-T1-E3 | SI2307CDS-T1 |
Description | MOSFET -30V Vds 20V Vgs SOT-23 | MOSFET -30V Vds 20V Vgs SOT-23 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 3.5 A | 3.5 A | - |
Rds On Drain Source Resistance | 88 mOhms | 88 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 4.1 nC | 4.1 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.8 W | 1.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1.45 mm | - | - |
Length | 2.9 mm | - | - |
Series | SI2 | SI2 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Width | 1.6 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 7 S | 7 S | - |
Fall Time | 7.7 ns | 7.7 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 13 ns | 13 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 17 ns | 17 ns | - |
Typical Turn On Delay Time | 5.5 ns | 5.5 ns | - |
Part # Aliases | SI2307CDS-GE3 | SI2307CDS-E3 | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |