PartNumber | SI2302CDS-T1-E3 | SI2302CDS-T1-GE3 | SI2302CDS-T1 |
Description | MOSFET 20V Vds 8V Vgs SOT-23 | MOSFET 20V Vds 8V Vgs SOT-23 | |
Manufacturer | Vishay | Vishay | VISHAY |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Height | 1.45 mm | 1.45 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | SI2 | SI2 | TrenchFETR |
Width | 1.6 mm | 1.6 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SI2302CDS-E3 | SI2302CDS-GE3 | - |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.050717 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 2.9 A | - |
Rds On Drain Source Resistance | - | 57 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
Vgs Gate Source Voltage | - | 4.5 V | - |
Qg Gate Charge | - | 5.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 860 mW | - |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 13 S | - |
Fall Time | - | 7 ns | 7 ns |
Rise Time | - | 7 ns | 7 ns |
Typical Turn Off Delay Time | - | 30 ns | 30 ns |
Typical Turn On Delay Time | - | 8 ns | 8 ns |
Part Aliases | - | - | SI2302CDS-E3 |
Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SOT-23-3 (TO-236) |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 710mW |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 2.6A (Ta) |
Rds On Max Id Vgs | - | - | 57 mOhm @ 3.6A, 4.5V |
Vgs th Max Id | - | - | 850mV @ 250μA |
Gate Charge Qg Vgs | - | - | 5.5nC @ 4.5V |
Pd Power Dissipation | - | - | 710 mW |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 2.6 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 57 mOhms |