PartNumber | RS1E200BNTB | RS1E 200BN | RS1E200BNFU7TB |
Description | MOSFET 4.5V Drive Nch MOSFET | ||
Manufacturer | ROHM Semiconductor | - | ROHM |
Product Category | MOSFET | - | IC Chips |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | HSOP-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 2.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 59 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 25 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | ROHM Semiconductor | - | - |
Fall Time | 25 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 65 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 105 ns | - | - |
Typical Turn On Delay Time | 20 ns | - | - |
Part # Aliases | RS1E200BN | - | - |
Unit Weight | 0.196723 oz | - | - |