RQ6C050BCTCR vs RQ6C050BC vs RQ6C050UN

 
PartNumberRQ6C050BCTCRRQ6C050BCRQ6C050UN
DescriptionMOSFET Pch -20V -5A Si MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-457-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance27 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge10.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min5.5 S--
Fall Time65 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesRQ6C050BC--
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