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| PartNumber | RN1104,LF(CT | RN1104T5LFT | RN1104 |
| Description | Bipolar Transistors - Pre-Biased NPN 50V 0.1A TRANSISTOR LOG | Bipolar Transistors - Pre-Biased NPN 50V 0.1A TRANSISTOR LOG | Pre-biased "digital" Transistor, 50v V(br)ceo, 100ma I(c), Sot-416 |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 47 kOhms | 47 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-75-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| Peak DC Collector Current | - | 100 mA | - |
| Pd Power Dissipation | 100 mW | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN1104 | RN1104 | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Brand | Toshiba | Toshiba | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Packaging | - | Reel | - |
| DC Current Gain hFE Max | - | 80 | - |