PartNumber | RGTH50TS65DGC11 | RGTH50TS65GC11 | RGTH50TS65D |
Description | IGBT Transistors 650V 25A IGBT Stop Trench | IGBT Transistors 650V 25A IGBT Stop Trench | |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Continuous Collector Current at 25 C | 50 A | 50 A | - |
Pd Power Dissipation | 174 W | 174 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | RGTH50TS65 | RGTH50TS65 | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 50 A | 50 A | - |
Operating Temperature Range | - 40 C to + 175 C | - 40 C to + 175 C | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Continuous Collector Current | 25 A | 25 A | - |
Gate Emitter Leakage Current | +/- 200 nA | +/- 200 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 450 | 450 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | RGTH50TS65D | RGTH50TS65 | - |
Unit Weight | 1.340411 oz | 1.340411 oz | - |