RGTH40TK65GC11 vs RGTH40TK65DGC11 vs RGTH40TS65

 
PartNumberRGTH40TK65GC11RGTH40TK65DGC11RGTH40TS65
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-3PFMTO-3PFM-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.6 V1.6 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C23 A23 A-
Pd Power Dissipation56 W56 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Part # AliasesRGTH40TK65RGTH40TK65D-
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